Document Type
Patent
Publication Date
3-30-2010
Abstract
One aspect of the invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, it includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
Department
Electrical Engineering; Mechanical Engineering
Patent Number
US7687334
Application Number
US20070224788
Application Published
9-27-2007
Application Filed
3-23-2007
Assignee
Board of Trustees of the University of Arkansas (Little Rock, AR)
Citation
Zou, M., Cai, L., & Brown, W. D. (2010). Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/81
Comments
Min Zou, Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR
Li Cai, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
William D. Brown, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR