Doped semiconductor nanocrystals and methods of making same
Document Type
Patent
Publication Date
12-29-2010
Abstract
A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant;; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
Department
Chemistry & Biochemistry
Patent Number
GB2441666 (B)
Application Published
11-2-2006
Application Filed
4-25-2006
Assignee
Board of Trustees of the University of Arkansas (Little Rock, AR)
Citation
Pradhan, N., & Peng, X. (2010). Doped semiconductor nanocrystals and methods of making same. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/296
Comments
Narayan Pradhan, Department of Chemistry and Biochemistry
Xiaogang Peng, Department of Chemistry and Biochemistry