Document Type

Patent

Publication Date

1-14-2025

Abstract

An integrated microwave photonics (IMWP) apparatus is provided using sapphire as a platform. The IMWP apparatus includes: a sapphire substrate having a step-terrace surface; and a III-V stack layer epitaxially grown on the sapphire substrate. The III-V stack layer includes: a first III-V layer disposed on the sapphire substrate; a low temperature (LT) III-V buffer layer disposed on the first III-V layer; multiple second III-V layers disposed and stacked on the LT III-V buffer layer; a third III-V layer disposed on the second III-V layers; a III-V quantum well layer disposed on the third III-V layers; and a fourth III-V layer disposed on the III-V quantum well layer. The second III-V layers are respectively annealed. A growth temperature of the LT III-V layer and a growth temperature of the III-V quantum well layer are lower than a growth temperature of each of the first, second, third and fourth III-V layers.

Department

Electrical Engineering; Physics

Patent Number

US12199130

Application Number

US 20220130887

Application Published

4-28-2022

Application Filed

10-25-2021

Assignee

Board of Trustees of the University of Arkansas (Little Rock, AR)

Comments

Shui-Qing Yu, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
Greg J. Salamo, Department of Physics, University of Arkansas, Fayetteville, AR
Rahul Kumar, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR
Samir K. Saha, Department of Physics, University of Arkansas, Fayetteville, AR
Yang Zhang, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR
Samir M. El-Ghazaly, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR

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