Document Type
Patent
Publication Date
7-21-2015
Abstract
A seed layer structure is annealed. It comprises a crystallization catalyst material on a seed semiconductor over a substrate. It contains an amorphous portion. Annealing of the seed layer structure converts the amorphous portion into a crystalline portion. The crystalline portion is connected to the substrate by subsurface crystal legs. The crystallization catalyst material formed underneath the crystalline portion by annealing is removed from the underneath of the crystalline portion.
Department
Electrical Engineering
Patent Number
US9087694
Application Number
US20130320342 A1
Application Published
12-5-2013
Application Filed
5-30-2013
Assignee
Silicon Solar Solutions, LLC (Fayetteville, AR); Board of Trustees of the University of Arkansas (Little Rock, AR)
Citation
Hutchings, D. A., Shumate, S. D., & Naseem, H. A. (2015). Ultra-large grain polycrystalline semiconductors through top-down aluminum induced crystallization (TAIC). Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/5
Comments
GOVERNMENT LICENSE RIGHTS This invention was made with government support under Small Business Innovation Research Grant Award No. IIP-1248962 awarded by National Science Foundation. The government has certain rights in the invention.
Seth D. Shumate, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
Hameed A. Naseem, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR