One aspect of the invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, it includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
Electrical Engineering; Mechanical Engineering
Board of Trustees of the University of Arkansas (Little Rock, AR)
Zou, M., Cai, L., & Brown, W. D. (2010). Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/81