Document Type
Article
Publication Date
9-14-2025
Abstract
Recently, efficient threading dislocation filtering was demonstrated for Ge on Si by utilizing an "aspect ratio trapping" technique, in which Ge is selectively grown in isolated SiO2 trenches or holes. In this work, x-ray diffraction from an array of micrometer-sized Ge islands on the Si substrate is studied experimentally and theoretically using the kinematical theory of diffraction and the Monte Carlo method. The model describes the tilt distribution between the islands and an interplay between the surface and interface strain. Evidence of strain distribution with depth is additionally shown by micro-Raman measurements, where the 632 and 785 nm excitations were used to probe the strain at different depths. These results provide a better understanding of the growth mechanisms for both selective area growth and aspect ratio trapping. (c) 2025 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license
Citation
Stanchu, H., Kryvyi, S., de Oliveira, F. M., Margiotta, S., Cook, M., Mazur, Y. I., Grant, P. C., Du, W., Li, B., Salamo, G. J., & Yu, S. (2025). X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping. Journal of Applied Physics, 138 (10) https://doi.org/10.1063/5.0291304
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
Keywords
SI. Layers
Comments
Web of Science
AIP