Date of Graduation

5-2024

Document Type

Dissertation

Degree Name

Doctor of Philosophy in Engineering (PhD)

Degree Level

Graduate

Department

Electrical Engineering and Computer Science

Advisor/Mentor

Mantooth, H. Alan

Committee Member

Zhao, Yue

Second Committee Member

Song, Xiaoqing

Third Committee Member

Cuzner, Robert

Keywords

MOSFET; silicon carbide; multi-objective optimization; stacked substrates; electric-potential-oriented module-system interface

Abstract

This dissertation introduces a holistic and systematic design methodology tailored to the 10 kV silicon carbide (SiC) MOSFET power modules to achieve multi-objective optimization with enhanced electric-field (E-field) distribution, minimized common-mode (CM) parasitic capacitance, and reduced system-level parasitic inductances. The proposed approach encompasses two innovative techniques: 1) an electric-potential-oriented module-system interface to reduce system-level parasitic inductance while maximizing insulation capability; 2) stacked substrates with patterned middle layer copper to alleviate the E-field concentration at the triple-point and reduce the maximum E-field without compromising on thermal resistance. The effectiveness of these innovative approaches is substantiated through the development of a 10 kV SiC MOSFET power module. Experimental validation showcases its robust voltage insulation capability with 0.87 µA leakage current at 10 kV, a 33 kV DC and 25 kV AC surface flashover for worst-case system fault conditions, a well-balanced 5.6 nH power loop inductance with embedded decoupling capacitors, a record-low 28 pF common mode (CM) parasitic capacitance, owing to the middle layer pattern structure, as well as a 38.6% E-filed concentration reduction at the triple-point. The partial discharge inception voltage (PDIV) of the proposed middle layer patterned stacked substrates is verified at 16.8 kVrms. Dynamic performance validation through a double-pulse test at 5 kV showcases negligible ringing and voltage overshot. All these exceptional attributes position the packaged 10 kV SiC MOSFET power module as an exemplary choice for MV power electronics applications.

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