Date of Graduation

5-2026

Document Type

Thesis

Degree Name

Master of Science in Materials Engineering (MS)

Degree Level

Graduate

Department

Materials Science & Engineering

Advisor/Mentor

Mantooth, Alan H.

Committee Member

Hu, Jin

Second Committee Member

Ware, Morgan

Keywords

SiC Schottky Barrier Diodes (SBDs); Power Electronics Applications; Junction Termination Extension (JTE); Floating Field Ring (FFR)

Abstract

The growing demand for energy-efficient, high performance power electronics in applications such as renewable energy systems, electric vehicles, industrial motor drives, and aerospace has accelerated the development of wide bandgap semiconductors like Silicon Carbide (SiC). This thesis focuses on the development and characterization of 1200V and 1700V SiC Schottky Barrier Diodes (SBDs), focusing on their performance optimization for power electronics applications. The key parameters and figure of merits for SiC Schottky barrier diode (SBD) is discussed. Commercially available 1200V and 1700V SBDs are characterized and key design parameters like drift region length, active area, and carrier concentration are extracted. The device design process is explored and edge termination structures like junction termination extension (JTE) and floating field ring (FFR) are discussed. The device design and optimization were conducted using advanced Technology Computer-Aided Design (TCAD) simulations, enabling precise modeling of electrical characteristics. The study also includes a comparative analysis of the diode performance against conventional silicon devices, highlighting advantages of SiC in thermal stability, power density, and energy efficiency

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