Document Type
Patent
Publication Date
2-10-2026
Abstract
A capacitor is provided for high temperature systems. The capacitor includes: a substrate formed from silicon carbide material; a dielectric stack layer, including a first layer deposited on the substrate and a second layer deposited on the first layer; a Schottky contact layer deposited on the second layer; and an Ohmic contact layer deposited on the substrate. The first layer is formed with aluminum nitride (AlN) epitaxially, and the second layer is formed with aluminum oxide (Al.sub.2O.sub.3). AlN and Al.sub.2O.sub.3 are ultrawide band gap materials, and as a result, they can be use as the dielectric in the capacitor, allowing the capacitance changes to be less than 10% between −250° C. and 600° C., which is very effective for the high temperature systems.
Department
Electrical Engineering; Mechanical Engineering
Patent Number
US12550341
Application Number
US 20220376120
Application Published
11-24-2022
Application Filed
5-17-2022
Assignee
Board of Trustees of the University of Arkansas (Little Rock, AR)
Citation
Ware, M. E., Ghosh, P. K., Meng, X., Sarollahi, M., & Allaparthi, R. (2026). Capacitors for high temperature systems, methods of forming same, and applications of same. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/515
Comments
Morgan E. Ware, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
Pijush Kanti Ghosh, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
Xiangbo Meng, Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR
Mirsaeid Sarollahi, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
Rohith Allaparthi, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR