Quantum oscillation studies of the nodal line semimetal Ni3In2S2-xSex

Authors

• M. M. Sharma, University of Arkansas, Fayetteville
• Santosh Karki Chhetri, University of Arkansas, Fayetteville
• Gokul Acharya, University of Arkansas, FayettevilleFollow
• David Graf, National High Magnetic Field Lab
• Dinesh Upreti, University of Arkansas-FayettevilleFollow
• Sagar Dahal, University of Arkansas, Fayetteville
• Md Rafique Un Nabi, University of Arkansas, FayettevilleFollow
• Sumaya Rahman, University of Arkansas, FayettevilleFollow
• Joshua Sakon, University of Arkansas, FayettevilleFollow
• Hugh O.H. Churchhill, University of Arkansas, Fayetteville
• Jin Hu, University of Arkansas, FayettevilleFollow

Document Type

Article

Publication Date

5-1-2025

Keywords

Magnetotransport, Nodal line semimetal, Quantum Oscillations, Topological semimetal, Kagome Material

Abstract

Ternary shandite compounds with the general formula T3M2X2 (T = Ni, Co, Rh or Pd; M = Sn, In, or Pb; and X = S or Se) have emerged as a large pool of topological semimetals. This family of compounds hosts different topological phases for various combinations of T, M and X. This paper reports the observation of quantum oscillations under the high magnetic fields in Ni3In2S2-xSex single crystals. Angular dependence of oscillation frequency suggests an evolution of the Fermi surface from three-dimensional to two-dimensional on Se substitution for S in Ni3In2S2. The effective mass obtained for each composition by fitting the oscillation amplitude with the Lifshitz-Kosevich formula, shows no significant change, suggesting that the topological phase might be relatively robust against enhanced spin-orbit coupling upon Se doping in Ni3In2S2.

Comments

Web of Science

Elsevier

Citation

M.M. Sharma, Santosh Karki Chhetri, Gokul Acharya, David Graf, Dinesh Upreti, Sagar Dahal, Md Rafique Un Nabi, Sumaya Rahman, Josh Sakon, Hugh O.H. Churchill, Jin Hu, Quantum oscillation studies of the nodal line semimetal Ni3In2S2-xSex, Acta Materialia, Volume 289, 2025, 120884, ISSN 1359-6454, https://doi.org/10.1016/j.actamat.2025.120884.