High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam

Authors

Emmanuel Wangila, University of Arkansas, FayettevilleFollow
Calbi Gunder, University of Arkansas, FayettevilleFollow
Mohammad Zamani-Alavijeh, University of Arkansas, FayettevilleFollow
Fernando Maia de Oliveira, University of Arkansas, FayettevilleFollow
Serhii Kryvyi, University of Arkansas, FayettevilleFollow
Aida Sheibani, University of Arkansas, FayettevilleFollow
Yuriy I. Mazur, University of Arkansas, FayettevilleFollow
Shui-Qing Yu, University of Arkansas, FayettevilleFollow
Gregory J. Salamo, University of Arkansas, FayettevilleFollow

Document Type

Article

Publication Date

8-2024

Keywords

single-step growth approach; room temperature PL; twinning

Abstract

We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a previously reported multi-step growth method. Omega-2theta scans confirmed the GaAs (111) orientation. Samples grown at 700 °C displayed the highest crystal quality with minimal defects and strain, evidenced by narrow FWHM values of the rocking curve. By varying the As/Ga flux ratio and the growth temperature, we significantly improved the quality of the GaAs layer on sapphire, as compared to that obtained in multi-step studies. Photoluminescence measurements at room temperature and 77 K further support these findings. This study underscores the critical role of the As/Ga flux ratio and growth temperature in optimizing GaAs epitaxial growth on sapphire.

Citation

Wangila, E., Gunder, C., Zamani-Alavijeh, M., de Oliveira, F. M., Kryvyi, S., Sheibani, A., Mazur, Y. I., Yu, S., & Salamo, G. J. (2024). High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam. Crystals, 14 (8), 724. https://doi.org/10.3390/cryst14080724

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.