Document Type
Article
Publication Date
12-2025
Abstract
This research investigates the development of a novel p-n-p-n homostructure solar cell, through semiconductor simulations using the Nextnano software. InGaN was used as a model system in order to achieve a bandgap with optimized efficiency for a p-n homojunction solar cell. By increasing the uniform doping concentration from 1.5*10(16) cm(-3) to 1.5*10(17) cm(-3), the open circuit voltage (V-oc) increased while the short-circuit current density (J(sc)) decreased, as expected in simple p-n junctions. The p-n-p-n structure achieved a peak efficiency of 32.91% at a doping level of 6.5*10(16) cm(-3), a similar to 7% improvement over a conventional p-n junction's 25.31% efficiency (International Journal of Photoenergy - 2015 - Mesrane - Design and Simulation of InGaN p-n Junction Solar Cell.pdf, (n.d.)). For higher uniform doping levels, above similar to 7.5*10(16) cm(-3), the turn-on of the I-V curves become sharp, suggesting that the device transforms into a bistable switch like a thyristor rather than a conventional solar cell leading to a highest efficiency of 48.68% for a doping concentration of 1.5*10(17) cm(-3).
Citation
Alhejji, M., Alavijeh, M., Kupernik, J. et al. Investigating the efficiency of InGaN p-n-p-n homojunction solar cells. MRS Advances 10, 2113–2118 (2025). https://doi.org/10.1557/s43580-025-01419-0
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
Keywords
homostructure solar cell, p-n-p-n, semiconductor simulations, Nextnano
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Web of Science
Springer