Document Type
Article
Publication Date
10-7-2020
Keywords
Fluorine, thin films, fracture, electrical resistivity, random-access storage, gold, copper compounds, memristors, electrical conductivity transitions, tin compounds, electrodes
Abstract
Memristors are considered to be next-generation non-volatile memory devices owing to their fast switching and low power consumption. Metal oxide memristors have been extensively investigated and reported to be promising devices, although they still suffer from poor stability and laborious fabrication process. Herein, we report a stable and power-efficient memristor with novel heterogenous electrodes structure and facile fabrication based on CuO-Cu2O complex thin films. The proposed structure of the memristor contains an active complex layer of cupric oxide (CuO) and cuprous oxide (Cu2O) sandwiched between fluorine-doped tin oxide (FTO) and gold (Au) electrodes. The fabricated memristors demonstrate bipolar resistive switching (RS) behavior with a low working voltage (~1 V), efficient power consumption, and high endurance over 100 switching cycles. We suggest the RS mechanism of the proposed device is related to the formation and rupture of conducting filaments inside the memristor. Moreover, we analyze the conduction mechanism and electron transport in the active layer of the device during the RS process. Such a facile fabricated device has a promising potential for future memristive applications.
Citation
Shariffar, A., Salman, H., Siddique, T. A., Gebril, W., & Manasreh, M. O. (2020). Resistive switching in FTO/CuO-Cu2O/Au memory devices. Micro & Nano Letters, 15 (12), 853-857. https://doi.org/10.1049/mnl.2020.0300
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Computer-Aided Engineering and Design Commons, Electro-Mechanical Systems Commons, Power and Energy Commons, VLSI and Circuits, Embedded and Hardware Systems Commons
Comments
This is a post-print of the published version found here: https://doi.org/10.1049/mnl.2020.0300.