Effects of high‑temperature annealing on the performance of copper oxide photodetectors
Date of Graduation
9-2021
Document Type
Article - Abstract Only
Abstract
Copper oxide thin films are grown using copper nanofilms oxidized at high annealing temperatures. The thin film crystallinity and surface morphology are probed using the X-ray diffractometer and scanning electron microscopy, indicating that the crystalline quality of the copper oxide thin films is improved by increasing the annealing temperature. Under ultraviolet–visible light illumination, the fabricated device with thin films annealed at 900 °C and the corresponding bandgap of 2.8 eV demonstrates the high responsivity of 15.1 A/W and maximum detectivity of 4.52 × 1012 cmHz1/2/W. The photosensitivity of thin films annealed at 900 °C is more than ten times higher than that of thin films annealed at 800 °C. The fabricated device works as a visible–ultraviolet photodetector and maintains uniform and stable performance for a tested period of eight weeks.
Keywords
Copper oxide thin films, Copper thermal annealing, Copper oxide surface morphology, UV–visible photodetector
Citation
Shariffar, A., Salman, H., Siddique, T. A., & Manasreh, M. O. (2021). Effects of high‑temperature annealing on the performance of copper oxide photodetectors. Applied Physics A, 127 https://doi.org/https://doi.org/10.1007/s00339-021-04906-x
Publication Status
1
https://doi.org/10.1007/s00339-021-04906-x
