Date of Graduation
5-2017
Document Type
Thesis
Degree Name
Bachelor of Science in Electrical Engineering
Degree Level
Undergraduate
Department
Electrical Engineering
Advisor/Mentor
Ware, Morgan
Committee Member/Reader
Wu, Jingxian
Abstract
In the search for high-efficiency solar cells, InxGa1-xN has come under scrutiny as a unique material with high potential. This is due to characteristics including an easily tunable bandgap, large range of potential bandgap values, and high heat resistance. However, one factor limiting its adaptation is the high density of crystal defects. In this thesis, the qualities of InGaN are discussed and the intermediate band solar cell structure is introduced. Additionally, the growth and characterization of two sets of InGaN-based solar cell devices are reported and evaluated.
Citation
McKenzie, K. (2017). Development of Intermediate Band Solar Cell through InGaN Quantum Well Structures. Electrical Engineering Undergraduate Honors Theses Retrieved from https://scholarworks.uark.edu/eleguht/52
Included in
Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Nanotechnology Fabrication Commons, Power and Energy Commons
