Date of Graduation
5-2018
Document Type
Thesis
Degree Name
Bachelor of Science in Electrical Engineering
Degree Level
Undergraduate
Department
Electrical Engineering
Advisor/Mentor
Chen, Zhong
Committee Member/Reader
Wu, Jingxian
Abstract
The need for high temperature, high power density power modules for applications such as electric vehicles and space exploration has driven the research into wide bandgap LEDs due to their potential operation at elevated temperatures. Wide bandgap LEDs offer an attractive solution due to properties such as high temperature tolerance, strong radiation hardness and good thermal conductivity. In this thesis, the electrical properties of GaN-on-SiC heterojunctions are studied as a precursor to an LED study, and the optical characterization of an InGaN/GaN MQW is reported. The GaN-on-SiC study revealed that these wide bandgap LEDs have linear sensitivity at high temperatures. The InGaN/GaN MQW PL results revealed that as the temperature increased, the bandgap decreased as well, thus affecting the overall intensity of the material. The results of this study indicate the feasibility of the integration of wide bandgap LEDs into high temperature power modules.
Citation
Sandoval, S. (2018). High Temperature Wide Bandgap Light Emitting Diodes for Harsh Environment Applications. Electrical Engineering Undergraduate Honors Theses Retrieved from https://scholarworks.uark.edu/eleguht/56
